Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices

1 August 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (8) , 194-196
https://doi.org/10.1109/edl.1982.25548

Abstract

The advantages of the modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined. In addition, the first demonstration of charge transfer in a modulation-doped AlGaAs/GaAs heterojunction is reported. A ten cell, three phase Schottky barrier gate CCD was fabricated using this structure and operated as a shift register. The details of the device fabrication and characterization are presented.

Keywords

EPITAXIAL LAYERS
GALLIUM ARSENIDE
CHARGE-COUPLED IMAGE SENSORS
CHARGE COUPLED DEVICES
CHARGE TRANSFER
DYNAMIC RANGE
ELECTRONS
MESFETS
SCHOTTKY BARRIERS
FABRICATION