Electron Damage Thresholds in InSb
- 15 July 1959
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 115 (2) , 345-346
- https://doi.org/10.1103/physrev.115.345
Abstract
Measurements of carrier removal rate and isochronal recovery in electron-irradiated InSb indicate that displacements are produced at electron energies as low as 240 kev. Two recovery stages have been found and the activation energies for recovery determined. The conductivity recovery in the low-temperature stage was found to be first order.Keywords
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