Platinum silicide fusion bonding

20 June 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (13) , 1153-1155
https://doi.org/10.1049/el:19910719

Abstract

Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bondable, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers.

Keywords

HYDROPHILIC SURFACE
CLEANING PROCESS
SI WAFERS
3D ICS
ALIGNED WAFER BONDING
HOT AQUA REGIA SELECTIVE ETCHING
FUSION BONDING
ELECTRICAL INTERCONNECTIONS
SI-PTSI

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