The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 79 (5) , 647-668
- https://doi.org/10.1109/5.90130
Abstract
Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive 'ohmic' contacts, surface modification methods, and experimental device applications are discussed. Of particular interest are high-temperature (300 degrees C) MOSFETs and metal contacts to CVD (chemical vapor deposition) diamond films which were used to fabricate high-temperature (580 degrees C) Schottky diodes, rudimentary MESFETs, and blue light-emitting diodes (LEDs). The status of the emerging technology is reviewed with an emphasis on the areas of current research activity.Keywords
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