Bound multiple-exciton complexes in silicon at high doping levels?
- 15 March 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 14 (6) , 481-483
- https://doi.org/10.1016/0038-1098(74)90972-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Temperature dependent properties of the condensed electron-hole state in germaniumSolid State Communications, 1972
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Recombination Kinetics of Excitonic Molecules and Free Excitons in Intrinsic SiliconPhysical Review B, 1970