Hall effect ofsingle crystals
- 1 June 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (21) , 13872-13877
- https://doi.org/10.1103/physrevb.57.13872
Abstract
For a number of single crystals with various oxygen concentrations and differing values of the zero magnetic-field critical temperature the Hall effect has been investigated between 10 and 300 K by applying magnetic fields and currents where denotes the direction perpendicular to the Cu-O planes of this material. These measurements yield that the sign change of the Hall voltage close to varies with δ and eventually disappears in heavily oxygen-depleted single crystals. Such behavior can qualitatively be explained by a model calculation based on the time-dependent Ginsburg-Landau theory. In the normal state, we find that the Hall coefficient and the Hall angle vary as and in an extended temperature range, as has previously been found for fully oxygenated and ( Zn). Deviations from these behaviors for both and are observed below a characteristic temperature whereby increases with decreasing i.e., increasing oxygen depletion. This implies a temperature-induced variation of the normal-state electronic spectrum and/or the scattering parameters governing the electronic transport of this material.
Keywords
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