Luminescence study of thallium implanted silicon

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Abstract
Ion-implanted Si:Tl was characterized using photo- and cathodoluminescence. The same sharp line defects were found to be produced by the Tl heavy ions as were identified in previous light ion studies. The defects produced by the implantation were removed and the Tl was activated using a two-step anneal process. A high quality annealed implant layer was produced from which the four excited states of the Tl bound exciton no-phonon transition could be resolved. An unidentified bound exciton peak related to the Tl acceptor was observed for the first time in both ion-implanted Si:Tl and in a comparison sample of bulk grown Si:Tl. This is the first reported study of an implanted dopant in silicon using luminescence.