Surface Effects of Radiation on Transistors*
- 1 January 1963
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 42 (1) , 95-129
- https://doi.org/10.1002/j.1538-7305.1963.tb04004.x
Abstract
Observation of surface effects of ionizing radiation on several types of transistors indicates that in reverse-biased devices these effects occur at much lower radiation dosage than in unbiased devices or bulk semiconductor material. Further, the tot...Keywords
This publication has 4 references indexed in Scilit:
- Mobility of Radiation-Induced Defects in GermaniumJournal of Applied Physics, 1961
- On the Neutron Bombardment Reduction of Transistor Current GainJournal of Applied Physics, 1960
- Spin Resonance in Electron Irradiated SiliconJournal of Applied Physics, 1959
- Review of Germanium Surface PhenomenaJournal of Applied Physics, 1956