Carrier Generation and Transport in Anthracene under Electron Bombardment

Bombardment of anthracene crystals by 10–60‐keV electrons produces equal numbers of electrons and holes by an intrinsic process throughout the region penetrated by the beam. Over the range examined, the yield is proportional to the total energy deposited at the rate of 400 eV per carrier pair. In “good” crystals, the yield at room temperature is independent of the applied field (for fields >3 kV cm⁻¹). This is interpreted as saturation of the generation process. The results are compared with those reported for other forms of excitation. The values for the drift mobilities, viz., ${\mu }_e\text{\hspace{0.17em}=\hspace{0.17em}0.38}$ and ${\mu }_h\text{\hspace{0.17em}=\hspace{0.17em}0.92}{\mathrm{cm}}^2{\sec }^{\text{−1}}·{\mathrm{V}}^{\text{−1}},$ and their temperature coefficients, agree well with other published values.