Silicon–refractory metal interfaces: Evidence of room-temperature intermixing for Si–Cr

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Abstract
Photoemission spectroscopy investigations of the Si–Cr interface using synchrotron radiation indicate metal–semiconductor intermixing during room temperature interface formation, in sharp contrast with the Si–V interface. The intermixed phase is 10–13 Å thick and is of definite metallic character. For higher metal coverage (≳20 monolayers) photoemission from Si 2p levels with variable surface sensitivity show Si segregation in the top layers of the Cr film.

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