Conceptual problems in modeling submicron device physics
- 1 September 1981
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 19 (3) , 540-544
- https://doi.org/10.1116/1.571122
Abstract
The study of high field transport in semiconductor devices has progressed very rapidly over the past decade, sustained in part by rapid technological advances in the solid state electronics industry. These have, however, generated important conceptual problems in modeling of high speed transport in nonlinear semiconductors. Some of these problems are discussed below.Keywords
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