GaInAsP/InP surface emitting lasers grown by chemical beam epitaxy

12 March 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (6) , 550-551
https://doi.org/10.1049/el:19920347

Abstract

A GaInAsP/InP surface emitting laser has been demonstrated grown by chemical beam epitaxy (CBE) for the first time. The device has a 30μm round-low mesa with a 1.0μm active layer. The threshold current as low as 2.7 mA (455 A/cm²) was obtained under 77 K CW operation (=1.43μm). This is the lowest value of long wavelength SE lasers ever reported. These results show the possibility of realising high performance SE lasers grown by CBE.

Keywords

ACTIVE LAYER
THRESHOLD CURRENT
GAINASP-INP
SURFACE EMITTING LASERS
1.43 MICRON
ROUND-LOW MESA
77 K
CHEMICAL BEAM EPITAXY
2.7 MA
CW OPERATION

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