Rectangular shaped quantum wire fabrication by growth mode switching between isotropic and anisotropic atomic layer epitaxy
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 976-977
- https://doi.org/10.1016/0022-0248(94)91177-0
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Crystallographic selective growth of GaAs by atomic layer epitaxyApplied Physics Letters, 1993
- InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxyApplied Physics Letters, 1990