Optical waveguides in single layers of Ga1−xAlx As grown on GaAs substrates
- 1 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (7) , 403-404
- https://doi.org/10.1063/1.1654935
Abstract
Efficient low‐loss optical waveguides have been made with the growth of only a single epilayer of Ga1−xAlx on GaAs substrates. The AlAs concentration gradient which is grown by liquid‐phase epitaxy using thin gallium melts is the cause of the guiding.Keywords
This publication has 3 references indexed in Scilit:
- Laser oscillation in epitaxial GaAs waveguides with corrugation feedbackApplied Physics Letters, 1973
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Hollow dielectric waveguide for distributed feedback lasersIEEE Journal of Quantum Electronics, 1972