The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†
- 1 October 1967
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 23 (4) , 381-391
- https://doi.org/10.1080/00207216708961546
Abstract
A model which indicates that the silicon growth rate should be porportional to the square root of the product of the gas pressure and velocity, at constant mol fraction, is shown to be in reasonable agreement with the experimental results for pressures in the range 0-13 to 1-98 atmospheres and gas velocities in the range 0-5 to 40 cm sec-1. It is also shown that the onset of etching with SiCl4-H2 mixtures at high mol fractions is relatively insensitive to pressure, whereas SiHCl3-H2 mixtures at High mol fractions only give rise to etching at less than atmospheric pressure.Keywords
This publication has 2 references indexed in Scilit:
- The Kinetics of Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1966
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961