The IGBT with monolithic overvoltage protection circuit
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 41-45
- https://doi.org/10.1109/ispsd.1993.297104
Abstract
A novel IGBT (insulated-gate bipolar transistor) with a monolithic overvoltage protection circuit has been developed to obtain high resistance to overvoltage stress. This device is characterized by novel integration of an avalanche diode with an IGBT structure. The conventional IGBT process can be used to fabricate this device without any additional photomasks. Since it exhibits a large safe operating area, this device can be applied not only to a soft switching application like a voltage resonant circuit but also to a hard switching application like a snubberless inductive load circuit.<>Keywords
This publication has 1 reference indexed in Scilit:
- The 3rd generation IGBT toward a limitation of IGBT performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002