A novel 4-18 GHz monolithic matrix distributed amplifier
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 143-147
- https://doi.org/10.1109/mcs.1989.37281
Abstract
The authors describe the design, fabrication, and performance of a 4-18 GHz matrix distributed amplifier which incorporates a novel biasing scheme enabling the amplifier to run at higher voltages while drawing only half of the current of conventional multistage amplifiers having comparable gain levels. A voltage divider is used at the input of the FET pair to derive the gate bias, ensuring that both FETs are biased at the same point. This scheme enables the stages to be connected in cascade at RF frequencies and in cascode for DC biasing, thus conserving current. The amplifier shows >13 dB gain across the frequency band using a chip area of only 1.9 mm*2.1 mm.< >Keywords
This publication has 5 references indexed in Scilit:
- A 2-18 GHz low-noise/high-gain amplifier moduleIEEE Transactions on Microwave Theory and Techniques, 1989
- The Matrix Amplifier: A High-Gain Module for Multioctave Frequency BandsIEEE Transactions on Microwave Theory and Techniques, 1987
- The Declining Drain Line Lengths Circuit--A Computer Derived Design Concept Applied to a 2 26.5-GHz Distributed AmplifierIEEE Transactions on Microwave Theory and Techniques, 1986
- Capacitively Coupled Traveling-Wave Power AmplifierIEEE Transactions on Microwave Theory and Techniques, 1984
- A Monolithic GaAs 1-13-GHz Traveling-Wave AmplifierIEEE Transactions on Microwave Theory and Techniques, 1982