Does the Ring Compound [(CH3)2GaNH2]3 Form during MOVPE of Gallium Nitride? Investigations via Density Functional and Reaction Rate Theories
- 4 December 2002
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 107 (1) , 291-297
- https://doi.org/10.1021/jp021721i
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- An experimental study of the reactions of trimethylgallium with ammonia and water over a wide temperature rangePhysical Chemistry Chemical Physics, 1999
- GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental MeasurementsJournal of the Electrochemical Society, 1997
- High temperature adduct formation of trimethylgallium and ammoniaApplied Physics Letters, 1996
- Kinetic Analyses Combining Quantum Chemical and Quantum Statistical Methods: Some Case StudiesThe Journal of Physical Chemistry, 1996
- An Approach for Modeling Surface Reaction Kinetics in Chemical Vapor Deposition ProcessesJournal of the Electrochemical Society, 1995
- Organometallic precursors for the formation of GaN by metal-organic chemical vapour deposition: a study of [(CH3)2GaNH2]3J. Chem. Soc., Dalton Trans., 1992
- On the Thermal Decomposition of Trimethylgallium—A Molecular Beam Sampling Mass Spectroscopy StudyJournal of the Electrochemical Society, 1991
- Gas‐Phase and Surface Reaction Mechanisms in MOCVD of GaAs with Trimethyl‐Gallium and ArsineJournal of the Electrochemical Society, 1991
- Ab initio effective core potentials for molecular calculations. Potentials for K to Au including the outermost core orbitalsThe Journal of Chemical Physics, 1985
- An evaluation of the kinetic data for hydrogen abstraction from silanes in the gas phaseReviews of Chemical Intermediates, 1978