Time-resolved photoluminescence studies of InxGa1−xAs1−yNy
- 10 January 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (2) , 188-190
- https://doi.org/10.1063/1.125698
Abstract
Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07–0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations.
Keywords
This publication has 19 references indexed in Scilit:
- InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAsApplied Physics Letters, 1999
- Photocurrent of 1eV GaInNAs lattice-matched to GaAsJournal of Crystal Growth, 1998
- 1-eV solar cells with GaInNAs active layerJournal of Crystal Growth, 1998
- Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodesJournal of Crystal Growth, 1998
- GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxyApplied Physics Letters, 1998
- GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodesIEEE Photonics Technology Letters, 1998
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981