Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers
- 12 November 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (20) , 4095-4097
- https://doi.org/10.1063/1.1628825
Abstract
Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.Keywords
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