Microstructural and electrical properties of gadolinium silicide

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Abstract
The surface morphology,microstructure, and chemical composition of gadolinium (Gd) silicides formed by i n s i t u vacuum annealing were investigated with scanning electron microscopy,transmission electron microscopy, and energy dispersive x‐ray analysis. Normally, the Gd silicides (GdSi1.7) have a hexagonal structure (defected A I B 2). However, the GdSi2 phase with orthorhombic structure was found to form after 500 °C annealing, and the Gd silicide–Si interface was found to be rather flat and smooth. Schottky barrier behavior on the Gd silicide formation, as a function of annealing temperature, was monitored by a combination of current–voltage and capacitance–voltage measurements. The correlation between the microstructure of the interface and the Schottky barrier is given and discussed.

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