THERMAL ASPECTS OF TRANSPORT IN CHEMICAL VAPOR DEPOSITION REACTORS: A TWO-DIMENSIONAL MODEL INCLUDING MULTICOMPONENT DIFFUSION AND SPECIES INTERDIFFUSION

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Abstract
A two-dimensional model is applied in a nonisothermal, low-pressure reactor to simulate the chemical vapor deposition (CVD) of silicon nitride from silicon tetrafluo-ride and ammonia. The deposition rate and distribution on the surface depend on surface chemical kinetics, multicomponent diffusion, convection, variable properties, species interdiffusion, thermal diffusion, etc. Previously, the effects of gas- phase transport and react ant depletion on the uniformity and rate of deposition of silicon nitride by CVD were studied for isothermal conditions. Here we study nonisothermal reactor conditions and include the solution of the energy equation for a variable property, multicomponent gas mixture consisting of five species. Multicomponent diffusion is included by solving the Stefan-Maxwell equations, and the energy equation includes species interdiffusion. Two irreversible surface reactions describe the surface chemistry. Results are obtained for the distributions of velocity, species, temperature, energy fluxes, and the deposition rate and deposition profile.

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