The base-collector heterojunction effect in SiGe-base bipolar transistors
- 30 June 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (6) , 593-598
- https://doi.org/10.1016/0038-1101(91)90131-h
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- A simulation study of high-speed silicon heteroemitter bipolar transistorsIEEE Transactions on Electron Devices, 1989
- A model-based comparison of switching characteristics between collector-top and emitter-top HBT'sIEEE Transactions on Electron Devices, 1987
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976