Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures
- 31 March 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 65 (10) , 1189-1192
- https://doi.org/10.1016/0038-1098(88)90920-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Critical conductivity at the magnetic-field-induced metal-insulator transition in n-GaAs and n-InSbJournal of Physics C: Solid State Physics, 1986
- A study of intersubband scattering in GaAs/AlxGa1−xAs heterostructures by means of a parallel magnetic fieldSolid State Communications, 1983
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperaturesPhysical Review B, 1979