Photon-stimulated ion desorption from condensed SiF4 and SiH4

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Abstract
Results of photon-stimulated ion desorption (PSID) experiments on condensed SiF4 and SiH4 are presented. Data on condensed SiF4 are presented in the photon energy range 100–170 eV. The major product is F+. PSID yield spectra are interpreted in terms of excitation of a Si(2p) electron and are compared to previous gas-phase and condensed SiF4 experiments. H+ was found to be the only product desorbing in significant quantities from condensed SiH4 in the photon energy range 15–30 eV. A weak threshold is observed at 16.5 eV and a strong threshold appears at 19 eV. These data are interpreted in terms of excitation of a Si(3s) electron, and comparisons are made to previous electron-stimulated desorption experiments on condensed Si(CH3)4 and Si(111):SiH3.

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