Silicon boron delta doped FET: growth and fabrication

26 March 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (7) , 667-669
https://doi.org/10.1049/el:19920422

Abstract

The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.

Keywords

MOSFET
LOW TEMPERATURE PROCESSING SCHEDULE
GATE DIELECTRIC
MBE
PLASMA ENHANCED OXIDE GROWTH
DELTA DOPED FET
SI:B
FIELD-EFFECT TRANSISTOR
FABRICATION

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