In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5A) , L790-792
- https://doi.org/10.1143/jjap.30.l790
Abstract
Hydrogenated amorphous silicon (a-Si:H) films were prepared with ultraviolet laser irradiation to modify the growing surface during the plasma-enhanced chemical vapor deposition. Using this treatment, the photoconductivity was improved by three to four orders of magnitude in films deposited at substrate temperatures below 100°C. Additionally, the optical band gap remained unchanged with the in-situ laser treatment. Consequently, high quality a-Si:H films, characterized by high photoconductivity and wide optical gap, were obtained at low substrate temperatures.Keywords
This publication has 5 references indexed in Scilit:
- Independent control of spin density and hydrogen-bonding configuration in glow-discharge-hydrogenated Si-Ge alloys using a cathode-heating methodApplied Physics Letters, 1988
- Deposition of high-quality a-Si:H by direct photodecomposition of Si2H6 using vacuum ultraviolet lightJournal of Applied Physics, 1988
- Hydrogenated amorphous silicon prepared by ArF and F2 excimer laser-induced photochemical vapor depositionApplied Physics Letters, 1987
- Quantitative photoexcitation study of SiH4 in vacuum ultravioletThe Journal of Chemical Physics, 1986
- Substitutional doping of amorphous siliconSolid State Communications, 1975