Electrochemical Photocapacitance Spectroscopy Method for Characterization of Deep Levels and Interface States in Semiconductor Materials

1 February 1984

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 131 (2) , 275-283
https://doi.org/10.1149/1.2115562

Abstract

The recently developed electrochemical photocapacitance spectroscopy (EPS) method for characterization of deep levels in semiconductors is described. Topics discussed include the advantages of the method, experimental considerations, and the determination of state densities and kinetic parameters (associated with state population/depopulation). Both steady‐state and transient capacitance changes are treated mathematically. Data for , , , a‐Si and are presented to illustrate the wide applicability of the method and its sensitivity to both bulk and interface states, including those observed by other characterization methods.

Keywords

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