Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fields
- 1 September 1966
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 27 (9) , 1511-1518
- https://doi.org/10.1016/0022-3697(66)90146-6
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- The anisotropy of conductivity of n-type germanium in strong d.c. fieldsThe European Physical Journal A, 1965
- Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in-Type GermaniumPhysical Review B, 1964
- Anisotropy of the Conductivity of-Type Germanium at High Electric FieldsPhysical Review B, 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Effect of High Pressure on Some Hot Electron Phenomena in-Type GermaniumPhysical Review B, 1960
- Millimeter Cyclotron Resonance in SiliconPhysical Review Letters, 1960
- Microwave Field Dependence of Drift Mobility in GermaniumPhysical Review B, 1959
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Minority Carrier Extraction in GermaniumPhysical Review B, 1955
- Hot Electron Problem in Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1955