Electrical properties of thin-film Al-CeF3-Al capacitors

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Abstract
The ac electrical properties of thin‐film Al‐CeF3‐Al samples are found to be extremely temperature and frequency dependent. Changes in capacitance are reported as high as 20 : 1 over a temperature range of 100 °C (at constant frequency) and a frequency range of a three decades (at constant temperature). At low temperatures and high frequencies the capacitance corresponds to the geometric capacitance, but at high temperatures and low frequencies the capacitance is independent of the film thickness. The results are explained in terms of Schottky barriers existing at the metal‐insulator interfaces. Excellent agreement is found to exist between the experimental data and the theory and this correlation permits determination of the doping density (?2×1019 cm−3), the donor depth (?0.64 eV), and the width of the Schottky barriers (? 50 Å) among other properties of the films.