Photoluminescence line shape of excitons in GaAs single-quantum wells with and without heterointerface ordering
- 1 August 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (3) , 1488-1491
- https://doi.org/10.1063/1.344406
Abstract
The photoluminescence line shape of excitons at low temperatures is investigated in GaAs single‐quantum wells grown by molecular‐beam epitaxy with and without intentional heterointerface ordering. From the study of the excitation density dependence in the range between 1015 and 1017 cm−3, it is found that the inhomogeneous linewidth is significantly affected by band‐filling effects of intrinsic defect states spatially localized in the wider wells. In the sample with heterointerface ordering the band‐filling effects are directly identified by observation of saturation of the localized excitonic emissions, which are split as a result of increased spatial coherence of the excitonic states.This publication has 12 references indexed in Scilit:
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