Accommodation of strain in ultrathin InAs/GaAs films

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Abstract
X-ray standing-wave and extended x-ray-absorption fine-structure measurements have determined the strain and bond distortions in a buried InAs monolayer grown epitaxially on GaAs(001). The In atoms are found to reside 1.64±0.03 Å above the last-As plane of the GaAs substrate with an In-As bond length of 2.57±0.02 Å. Relative to bulk InAs, this corresponds to an 8% expansion in the In-As planar distance perpendicular to the interface and a 0.05-Å compression in the In-As bond length. This experiment indicates that macroscopic-elastic theory describes the distortions in InAs/GaAs(001) films even in the monolayer limit.

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