Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance
- 1 October 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (10A) , L1382
- https://doi.org/10.1143/jjap.33.l1382
Abstract
GaInAs/GaInAsP multi-quantum-wires and -boxes with the size of 20-30 nm and aspect ratio greater than 6 were fabricated by combining electron beam lithographt and substrate-potential-controlled electron cyclotron resonance (ECR) dry etching. The photoluminescence (PL) at 77K was observed from the buried multi-quantum wires regrown by OMVPE. The PL intensity of the multi-quantum-wire sample, normalized by the space filling factor of the active region, was 66% of that of the multi-quantum-film structure before etching, which confirms the low-damage feature of this fabrication process.Keywords
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