Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 499-502
- https://doi.org/10.1109/iedm.1990.237059
Abstract
The authors report on the fabrication and characterization of a high-performance 80-nm self-aligned T-gate AlInAs/GaInAs high electron mobility transistor (SAGHEMT). The 80 nm*50 mu m devices reported exhibit good pinchoff characteristics, high transconductance (g/sub m/=1150 mS/mm), low output conductance (g/sub ds/=120 mS/mm at RF), and state-of-the-art current gain cutoff frequency (f/sub T/=250 GHz). Modeling and analysis indicate that it is possible to significantly improve the performance of AlInAs/GaInAs SAGHEMTs by further reducing the gate length and/or optimizing the device structure.<>Keywords
This publication has 1 reference indexed in Scilit:
- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTsIEEE Transactions on Electron Devices, 1989