Ion beam crystallography of silicon surfaces IV. Si(111)-(2 × 1)
- 1 November 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 163 (2-3) , 315-334
- https://doi.org/10.1016/0039-6028(85)91063-5
Abstract
No abstract availableThis publication has 44 references indexed in Scilit:
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Spin Polarization and Atomic Geometry of the Si(111) SurfacePhysical Review Letters, 1981
- Electronic states of Si(111) surfacesJournal of Vacuum Science and Technology, 1981
- Theoretical studies of Si(111) surface structuresJournal of Vacuum Science and Technology, 1981
- Electronic structure of Si(111) surfacesSurface Science, 1980
- Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status reportJournal of Vacuum Science and Technology, 1980
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- Measurement of the Angle of Dangling-Bond Photoemission from Cleaved SiliconPhysical Review Letters, 1974
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961