Anodic Oxide Films and Electrochemical Reactions on Cd0.2Hg0.8Te

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Abstract
The formation and reduction of anodic oxide on (CMT) are studied by electrochemical methods and x‐ray photoelectron spectroscopy (XPS). The anodic oxide is formed at for pH 4.9 and for pH 13 (SHE). The and contents relative to increase within the oxide with the pH value. In a small potential range, , pH 4.9, and , pH 13, is oxidized separately. This behavior leads to a oxide surface layer in alkaline solutions whereas in acidic solutions the oxidation products are dissolved completely and the oxide is stabilized only by an content for . In alkaline solutions, CMT shows a small Cd deficiency at the semiconductor‐oxide interface according to an increased Cd content for the oxide. Ethylene glycol is a necessary additive to to form a well‐passivating film presumably by the reduction of the solubility of the oxide. The presence of Cd and Hg in the bulk and and within the oxide is a necessary condition from the side of the solid phase. The formation of tellurites and ditellurites seems reasonable to explain the stability of the passivating oxide layer.

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