Reduction of dark current in photodiodes by the use of a resonant cavity
- 27 May 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (11) , 1019-1021
- https://doi.org/10.1049/el:19930680
Abstract
The advantages of using a resonant cavity enhancement scheme to decrease the dark current of heterojunction photodiodes are considered. It is shown that the employment of very thin absorption layers, allowed by this scheme, provides a significant reduction of the generation component of the dark current. Experimental results for InGaAs/InAlAs pin photodiodes suggest that the tunnelling component of the dark current can be also suppressed in resonant cavity enhanced photodetectors.Keywords
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