Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires
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- 13 September 2005
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 5 (10) , 1943-1947
- https://doi.org/10.1021/nl051304s
Abstract
We have synthesized GaAs−GaxIn1-xP (0.34 < x < 0.69) core−shell nanowires by metal−organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 °C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 °C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core−shell nanowires were studied and confirmed by calculations based on deformation potential theory.Keywords
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