Superconducting transition temperatures of reactively sputtered films of tantalum nitride and tungsten nitride

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Abstract
Superconducting tantalum nitride and tungsten nitride films have been prepared by reactively sputtering the pure metals in argon−nitrogen gas mixtures. X−ray diffraction and Auger electron spectroscopy were used to characterize the deposited compounds. For fcc TaN a maximum Tc of 8.15 K was measured. The high Tc is attributed to achieving a nitrogen content close to the stoichiometric composition. In the tungsten−nitrogen system, a mononitride was not produced. However, superconductivity was found for films in the 5−20 at.% nitrogen range. The maximum Tc of 4.85 K occurred in a compound close to the phase boundary between β−W and W2N.

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