The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure
- 1 June 2001
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 388 (1-2) , 226-230
- https://doi.org/10.1016/s0040-6090(01)00826-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrical Properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si Structure for Nondestructive Readout MemoryJapanese Journal of Applied Physics, 1998
- Electrical characteristics of PT-bismuth strontium tantalate(BST)-P-SI with zirconium oxide buffer layerIntegrated Ferroelectrics, 1997
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996
- Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si SubstratesJapanese Journal of Applied Physics, 1995
- Fatigue-free ferroelectric capacitors with platinum electrodesNature, 1995
- Integration of ferroelectric thin films into nonvolatile memoriesJournal of Vacuum Science & Technology A, 1992
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988