The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system
- 28 February 1970
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 5 (2) , 69-72
- https://doi.org/10.1016/0025-5408(70)90128-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Bibliography on AIIBIVC22 V ternary compoundsJournal of Materials Science, 1967
- Semiconducting AIIBIVC CompoundsPhysica Status Solidi (b), 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- The prediction of semiconducting properties in inorganic compoundsJournal of Physics and Chemistry of Solids, 1958