On the stability of thin epitaxial NiSi2 layers on Si (111)
- 31 December 1986
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 2 (4) , 363-368
- https://doi.org/10.1016/0749-6036(86)90048-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBEJapanese Journal of Applied Physics, 1984
- Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compoundsJournal of Applied Physics, 1984
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Si(111) surface structures by glancing-incidence high-energy electron diffractionActa Crystallographica Section A, 1972