Electrical characterization of ferroelectric, paraelectric, and superparaelectric thin films
- 1 September 1998
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 21 (1-4) , 27-40
- https://doi.org/10.1080/10584589808202048
Abstract
Detailed equivalent circuit models of ferroelectric and high-permittivity dielectric capacitors are required for the development of FeRAM and ultra-dense DRAM devices. This review comprises the frequency dependence of C-V and P-V characteristics, grain size effects, electrode interface effects, as well as reversible and irreversible contributions to the ferroelectric polarization and discusses their impact on the equivalent circuit modeling.Keywords
This publication has 24 references indexed in Scilit:
- The effect of grain and particle size on the microwave properties of barium titanate (BaTiO3)Journal of Applied Physics, 1998
- The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor depositionJournal of Applied Physics, 1997
- Dielectric analysis of intergrated ceramic thin film capacitorsIntegrated Ferroelectrics, 1997
- Dielectric relaxation of perovskite—type oxide thin filmsIntegrated Ferroelectrics, 1995
- Dielectric dispersion of ferroelectric ceramics and single crystals at microwave frequenciesAnnalen der Physik, 1994
- Emission of GHz shear waves by ferroelastic domain walls in ferroelectricsApplied Physics Letters, 1993
- Ferroelectric MemoriesScience, 1989
- The Influence of Piezoelectric Grain Resonance on the Dielectric Spectra of LiNbO3 CeramicsJournal of the American Ceramic Society, 1983
- Grain-size effects on dielectric properties in barium titanate ceramicsJournal of Applied Physics, 1976
- Domain Boundary Motion in Ferroelectric Crystals and the Dielectric Constant at High FrequencyPhysical Review B, 1951