Three-dimensional simulation of ion-enhanced dry-etch processes
- 1 September 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 14 (3-4) , 269-281
- https://doi.org/10.1016/0167-9317(91)90012-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The influence of ion scattering on dry etch profilesJournal of Vacuum Science & Technology B, 1989
- Computer-aided resist modelling with extended XMAS in x-ray lithographyMicroelectronic Engineering, 1989
- A generalized plasma etching modelJournal of Applied Physics, 1988
- A general simulator for VLSI lithography and etching processes: Part II—Application to deposition and etchingIEEE Transactions on Electron Devices, 1980
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979