Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs
- 15 August 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (6) , 3872-3877
- https://doi.org/10.1103/physrevb.40.3872
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Unification of the properties of theEL2 defect in GaAsPhysical Review B, 1989
- Effect of plastic deformation on electronic properties of GaAsJournal of Applied Physics, 1987
- Antisite-related defects in plastically deformed GaAsPhysical Review B, 1986
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980