Determination of the band-gap decrease in doped Ge and Si from drop properties
- 15 April 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (8) , 3661-3664
- https://doi.org/10.1103/physrevb.13.3661
Abstract
A theoretical analysis of the shift of the drop recombination line is shown to give direct information about the change of the effective energy gap with doping.Keywords
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