Radiation damage in neutron transmutation-doped silicon. II. Infrared study

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Abstract
Infrared absorption study of the annealing behavior of defects in neutron transmutation-doped silicon is reported in this paper. Infrared absorption measurements were carried out in the region 10 000–400 cm−1. This has shown the presence of extended band edge tailing, divacancy associated bands (5882, 2900, and 2760 cm−1) and higher order bands (1300–700 cm−1) at different stages of isochronal annealing from 423 to 873 K. The study of higher order bands under illumination with monochromatic light of wavelength varying from 0.5 to 1.5 μm has helped in understanding the nature of the transitions responsible for higher order bands. These bands disappear on annealing at 873 K, and no new bands appear on further annealing the sample to 1223 K. By correlating the present results with our earlier electron paramagnetic resonance results, we have postulated the formation of voids at higher temperatures of isochronal annealing.