Tri-layer a-Si:H integrated circuits on polymeric substrates
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 94 (01631918) , 253-256
- https://doi.org/10.1109/iedm.1998.746348
Abstract
Using a thermal mountant, we have fabricated hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and integrated circuits on both colored and nearly colorless polyimide substrates with performance very similar to devices fabricated on glass substrates. Delay and power dissipation were measured with ring oscillators; minimum stage delay was less than 10 /spl mu/sec, and minimum power dissipation was less than 10 /spl mu/W per stage. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.Keywords
This publication has 3 references indexed in Scilit:
- Improved thermal control for a-Si:H photovoltaic cells fabricated on polymeric substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Thin film transistors for foldable displaysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layerIEEE Electron Device Letters, 1997