High Frequency SAW Devices on AlN/Al2O3
- 1 January 1978
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The structural and piezoelectric properties of epitaxial AℓN on Aℓ2O3Journal of Electronic Materials, 1975
- Evaluation of AlN Films on Sapphire for Surface Acoustic Wave ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- The growth, crystallographic and electrical assessment of epitaxial layers of aluminium nitride on corundum substratesJournal of Crystal Growth, 1974
- rf-sputtered aluminum nitride films on sapphireApplied Physics Letters, 1974
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973