Exciton and electron-hole plasma formation dynamics in ZnO
- 18 July 2007
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 76 (4)
- https://doi.org/10.1103/physrevb.76.045214
Abstract
Euan Hendry, M. Koeberg, and M. Bonn, Physical Review B, Vol. 76, article 045214 (2007). "Copyright © 2007 by the American Physical Society."We employ optical pump-THz probe measurements to study the formation of excitons and electron-hole plasmas following photogeneration of a hot electron-hole gas in the direct gap semiconductor zinc oxide. Below the Mott density, we directly observe the evolution of the hot electron-hole plasma into an insulating exciton gas in the 10 to 100 ps following photoexcitation. The temperature dependence of this process reveals that the rate determining step for exciton formation involves acoustic phonon emission. Above the Mott density, the density of the hot electron-hole plasma initially decreases very rapidly (~1.5 ps) through Auger annihilation until a stable plasma is formed close to the Mott density. In contrast to exciton formation, Auger annihilation is found to be independent of lattice temperature, occurring while the plasma is still hotKeywords
This publication has 30 references indexed in Scilit:
- Semiconductor excitons in new lightNature Materials, 2006
- Determination of the Exciton Formation in Quantum Wells from Time-Resolved Interband LuminescencePhysical Review Letters, 2004
- Condensation of Semiconductor Microcavity Exciton PolaritonsScience, 2002
- Exciton developmentsNature, 2002
- ZnO as a material mostly adapted for the realization of room-temperature polariton lasersPhysical Review B, 2002
- Many-body and correlation effects in semiconductorsNature, 2001
- Relaxation of Nonthermal hh and lh Excitons in ZnSe Quantum WellsPhysica Status Solidi (b), 1998
- Free exciton emission in GaNPhysical Review B, 1996
- Selective exciton formation in thin GaAs/As quantum wellsPhysical Review Letters, 1993
- Dynamics of exciton formation and relaxation in GaAs quantum wellsPhysical Review B, 1990